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ZXTP558LSTZ Datasheet(PDF) 2 Page - Diodes Incorporated |
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ZXTP558LSTZ Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 5 page ZXTP558L Document number: DS32186 Rev. 1 - 2 2 of 5 www.diodes.com June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTP558L Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage VCEO -400 V Emitter-Base Voltage VEBO -7 V Continuous Collector Current IC -500 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note x) PD 1 W Thermal Resistance, Junction to Ambient @ TA = 25°C RθJA 125 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -400 ⎯ ⎯ V IC = -100μA Collector-Emitter Breakdown Voltage (Note 4) V(BR)CEO -400 ⎯ ⎯ V IC = -10mA Emitter-Base Breakdown Voltage V(BR)EBO -7 ⎯ ⎯ V IE = -100μA Collector Cutoff Current ICBO ⎯ ⎯ -100 nA VCB = -320V Emitter Cutoff Current ICES ⎯ ⎯ -100 nA VCE = -320V Base Cutoff Current IEBO ⎯ ⎯ -100 nA VBE = -4V DC Current Gain (Note 4) hFE 100 100 ⎯ ⎯ ⎯ 300 ⎯ ⎯ VCE = -10V, IC = -1mA VCE = -10V, IC = -50mA Collector-Emitter Saturation Voltage (Note 4) VCE(sat) ⎯ ⎯ ⎯ ⎯ -0.2 -0.5 V IC = -20mA, IB = -2mA IC = -50mA, IB = -6mA Base-Emitter Turn-On Voltage VBE(on) ⎯ ⎯ -0.9 V VCE = -10V, IC = -50mA Base-Emitter Saturation Voltage VBE(sat) ⎯ ⎯ -0.9 V IC = -50mA, IB = -5mA Output Capacitance (Note 4) Cobo ⎯ ⎯ 5 pF VCB = -20V, f = 1.0MHz Current Gain-Bandwidth Product fT 50 ⎯ ⎯ MHz VCE = -20V, IC = -10mA, f = 20MHz Turn-On Time ton ⎯ 95 ⎯ ns VCE = -100V, IC = -50mA IB1 = 5mA, IB2 = -10mA Turn-Off Time toff ⎯ 1600 ⎯ ns Notes: 4. Measured under pulsed conditions. Pulse width = 300μs; Duty cycle ≤ 2%. |
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