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FZT658 Datasheet(PDF) 2 Page - Diodes Incorporated |
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FZT658 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 2 page SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - OCTOBER 1995 FEATURES * 400 Volt VCEO * Low saturation voltage COMPLEMENTARY TYPE - FZT758 PARTMARKING DETAIL - FZT658 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 5V Peak Pulse Current ICM 1A Continuous Collector Current IC 0.5 A Power Dissipation at Tamb=25°C Ptot 2W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Breakdown Voltage V(BR)CBO 400 V IC=100µA V(BR)CEO 400 V IC=10mA* V(BR)EBO 5V IE=100µA Collector Cut-Off Current ICBO 100 nA VCB=320V Emitter Cut-Off Current IEBO 100 nA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.3 0.25 0.5 V V V IC=20mA, IB=1mA* IC=50mA, IB=5mA* IC=100mA, IB=10mA Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=100mA, IB=10mA* Base-Emitter Turn-On Voltage VBE(on) 1.0 V IC=100mA, VCE=5V* Static Forward Current Transfer Ratio hFE 50 50 40 IC=1mA, VCE=5V* IC=100mA, VCE=5V* IC=200mA, VCE=10V* Transition Frequency fT 50 MHz IC=10mA, VCE=20V f=20MHz Output Capacitance Cobo 10 pF VCB=20V, f=1MHz Switching Times ton 130 ns IC=100mA, VCC=100V IB1=10mA, IB2=-20mA toff 3300 ns *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device FZT658 FZT658 C C E B C C E B 3 - 216 3 - 215 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 TYPICAL CHARACTERISTICS VCE(sat) v IC I+ - Collector Current (Amps) Tamb=25°C VCE(sat) v IC I+ - Collector Current (Amps) -55°C +25°C +100°C +175°C +100°C +25°C -55°C I+ - Collector Current (Amps) I+ - Collector Current (Amps) hFE v IC VBE(sat) v IC I+ - Collector Current (Amps) VBE(on) v IC IC/IB=50 IC/IB=10 VCE=10V VCE=10V 300 200 100 0.001 0.001 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 -55°C +25°C +100°C +175°C IC/IB=10 0.001 0.001 IC/IB=20 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.001 -55°C +25°C +100°C +175°C IC/IB=10 1 0.1 Safe Operating Area VCE- Collector Emitter Voltage (V) 10 100 1s DC 100ms 10ms 100µs 1ms 1 0.01 1000 0.001 |
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