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PJP5N60 Datasheet(PDF) 1 Page - Pan Jit International Inc. |
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PJP5N60 Datasheet(HTML) 1 Page - Pan Jit International Inc. |
1 / 5 page PAGE . 1 March 31,2010-REV.00 PJP5N60 / PJF5N60 FEATURES • 5A , 600V, R DS(ON)=2.1 Ω @V GS=10V, ID=2.5A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives MECHANICAL DATA • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 ORDERING INFORMATION 600V N-Channel Enhancement Mode MOSFET Maximum RATINGS and Thermal Characteristics (T A=25 OC unless otherwise noted ) Note: 1. Maximum DC current limited by the package PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE Gate Drain Source TO-220AB / ITO-220AB TO-220AB ITO-220AB INTERNAL SCHEMATIC DIAGRAM 1 2 3 G D S 1 2 3 G D S TYPE MARKING PACKAGE PACKING PJP5N60 P5N60 TO-220AB 50PCS/TUBE PJF5N60 F5N60 ITO-220AB 50PCS/TUBE PA RA ME TE R S ymb o l P J P 5 N6 0 P J F 5 N6 0 Uni ts D r a i n- S o ur c e Vo lta g e V D S 6 0 0 V Ga te - S o ur c e Vo lta g e V GS +3 0 V C o nti nuo us D ra i n C ur re nt I D 5 5 A P uls e d D r a i n C urr e nt 1) I D M 2 0 2 0 A Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T A = 2 5 OC P D 8 9 0 .7 1 4 4 .6 0 .3 6 W Op e ra ti ng J unc t i o n a nd S to ra g e Te mp e r a ture Ra ng e T J , T S TG -5 5 to +1 5 0 OC Avalanche Energy with Single Pulse I AS=5A, VDD=50V, L=28mH E A S 3 5 0 mJ Junction-to-Case Thermal Resistance R θ J C 1 .4 0 2 .8 0 OC /W Junction-to Ambient Thermal Resistance R θ J A 6 2 .5 1 0 0 OC /W |
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