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PJF8N60 Datasheet(PDF) 1 Page - Pan Jit International Inc. |
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PJF8N60 Datasheet(HTML) 1 Page - Pan Jit International Inc. |
1 / 5 page PAGE . 1 May 10,2010-REV.01 PJP8N60 / PJF8N60 FEATURES • 8A , 600V, R DS(ON)=1.2 Ω @V GS=10V, ID=4.0A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives MECHANICAL DATA • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 ORDERING INFORMATION 600V N-Channel Enhancement Mode MOSFET Maximum RATINGS and Thermal Characteristics (T A=25 OC unless otherwise noted ) Note: 1. Maximum DC current limited by the package PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE Gate Drain Source TO-220AB / ITO-220AB TO-220AB ITO-220AB INTERNAL SCHEMATIC DIAGRAM 1 2 3 G D S 1 2 3 G D S TYPE MARKING PACKAGE PACKING PJP8N60 P8N60 TO-220AB 50PCS/TUBE PJF8N60 F8N60 ITO-220AB 50PCS/TUBE PA RA ME TE R S ymb o l P J P 8 N6 0 P J F 8 N6 0 Uni ts D r a i n- S o ur c e Vo lta g e V D S 6 0 0 V Ga te - S o ur c e Vo lta g e V GS +3 0 V C o nti nuo us D ra i n C ur re nt I D 8 8 A P uls e d D r a i n C urr e nt 1) I D M 3 2 3 2 A Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T A = 2 5 OC P D 1 2 5 1 .0 4 5 0 .3 9 W Op e ra ti ng J unc t i o n a nd S to ra g e Te mp e r a ture Ra ng e T J , T S TG -5 5 to +1 5 0 OC Avalanche Energy with Single Pulse I AS=8.0A, VDD=50V, L=15.6mH E A S 5 0 0 mJ Junction-to-Case Thermal Resistance R θ J C 1 2 .7 8 OC /W Junction-to Ambient Thermal Resistance R θ J A 6 2 .5 1 0 0 OC /W |
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