PAGE . 1

May 10,2010-REV.01

PJP8N60 / PJF8N60

FEATURES

• 8A , 600V, R

Ω

@V

• Low ON Resistance

• Fast Switching

• Low Gate Charge

• Fully Characterized Avalanche Voltage and Current

• Specially Desigened for AC Adapter, Battery Charge and SMPS

• In compliance with EU RoHs 2002/95/EC Directives

MECHANICAL DATA

• Case: TO-220AB / ITO-220AB Molded Plastic

• Terminals : Solderable per MIL-STD-750,Method 2026

ORDERING INFORMATION

600V N-Channel Enhancement Mode MOSFET

Maximum RATINGS and Thermal Characteristics (T

Note: 1. Maximum DC current limited by the package

PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Gate

Drain

Source

TO-220AB / ITO-220AB

TO-220AB

ITO-220AB

INTERNAL SCHEMATIC DIAGRAM

1

2

3

G

D

S

1

2

3

G

D

S

TYPE

MARKING

PACKAGE

PACKING

PJP8N60

P8N60

TO-220AB

50PCS/TUBE

PJF8N60

F8N60

ITO-220AB

50PCS/TUBE

PA RA ME TE R

S ymb o l

P J P 8 N6 0

P J F 8 N6 0

Uni ts

D r a i n- S o ur c e Vo lta g e

V

D S

6 0 0

V

Ga te - S o ur c e Vo lta g e

V

GS

+3 0

V

C o nti nuo us D ra i n C ur re nt

I

D

8

8

A

I

D M

3 2

3 2

A

Ma xi mum P o we r D i s s i p a ti o n

D e ra ti ng F a c to r

T

P

D

1 2 5

1 .0

4 5

0 .3 9

W

Op e ra ti ng J unc t i o n a nd S to ra g e Te mp e r a ture Ra ng e

T

-5 5 to +1 5 0

Avalanche Energy with Single Pulse

I

E

A S

5 0 0

mJ

Junction-to-Case Thermal Resistance

R

θ

J C

1

2 .7 8

Junction-to Ambient Thermal Resistance

R

θ

J A

6 2 .5

1 0 0