ZHB6718 datasheet(4/8 Pages) DIODES

Part #	ZHB6718

Description	SM-8 BIPOLAR TRANSISTOR H-BRIDGE

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Manufacturer	DIODES [Diodes Incorporated]

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PNP TRANSISTORS

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C ).

PARAMETER

SYMBOL

MIN.

TYP.

MAX. UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO

-20

-65

V

IC=-100µA

Collector-Emitter

Breakdown Voltage

V(BR)CEO

-20

-55

V

IC=-10mA*

Emitter-Base Breakdown

Voltage

V(BR)EBO

-5

-8.8

V

IE=-100µA

Collector Cut-Off Current ICBO

-100

nA

VCB=-15V

Emitter Cut-Off Current

IEBO

-100

nA

VEB=-4V

Collector Emitter Cut-Off

Current

ICES

-100

nA

VCES=-15V

Collector-Emitter

Saturation Voltage

VCE(sat)

-16

-130

-190

-40

-200

-260

mV

IC=-100mA, IB=-10mA*

IC=-1A, IB=-20mA*

IC=-2.5A, IB=-200mA*

Base-Emitter

Saturation Voltage

VBE(sat)

-0.98

-1.1

V

IC=-2.5A, IB=-200mA*

Base-Emitter Turn-On

Voltage

VBE(on)

0.85

V

I+=-2.5A, VCE=-2V*

Static Forward Current

Transfer

Ratio

hFE

300

150

35

475

450

230

70

30

IC=-10mA, VCE=-2V*

IC=-100mA, VCE=-2V*

IC=-2A, VCE=-2V*

IC=-4A, VCE=-2V*

IC=-6A, VCE=-2V*

Transition

Frequency

fT

150

180

MHz

IC=-50mA, VCE=-10V

f=100MHz

Output Capacitance

Cobo

21

30

pF

VCB=-10V, f=1MHz

Turn-On Time

t(on)

40

ns

VCC=-10V, IC=-1A

IB1=IB2=-20mA

Turn-Off Time

t(off)

670

ns

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%.

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