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ZHB6718 Datasheet(PDF) 4 Page - Diodes Incorporated |
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ZHB6718 Datasheet(HTML) 4 Page - Diodes Incorporated |
4 / 8 page PNP TRANSISTORS ELECTRICAL CHARACTERISTICS (at Tamb= 25°C ). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -20 -65 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -20 -55 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 -8.8 V IE=-100µA Collector Cut-Off Current ICBO -100 nA VCB=-15V Emitter Cut-Off Current IEBO -100 nA VEB=-4V Collector Emitter Cut-Off Current ICES -100 nA VCES=-15V Collector-Emitter Saturation Voltage VCE(sat) -16 -130 -190 -40 -200 -260 mV mV mV IC=-100mA, IB=-10mA* IC=-1A, IB=-20mA* IC=-2.5A, IB=-200mA* Base-Emitter Saturation Voltage VBE(sat) -0.98 -1.1 V IC=-2.5A, IB=-200mA* Base-Emitter Turn-On Voltage VBE(on) 0.85 V I+=-2.5A, VCE=-2V* Static Forward Current Transfer Ratio hFE 300 300 150 35 475 450 230 70 30 IC=-10mA, VCE=-2V* IC=-100mA, VCE=-2V* IC=-2A, VCE=-2V* IC=-4A, VCE=-2V* IC=-6A, VCE=-2V* Transition Frequency fT 150 180 MHz IC=-50mA, VCE=-10V f=100MHz Output Capacitance Cobo 21 30 pF VCB=-10V, f=1MHz Turn-On Time t(on) 40 ns VCC=-10V, IC=-1A IB1=IB2=-20mA Turn-Off Time t(off) 670 ns *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%. ZHB6718 |
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