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LC321664AT-80 Datasheet(PDF) 1 Page - Sanyo Semicon Device

Part # LC321664AT-80
Description  1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

LC321664AT-80 Datasheet(HTML) 1 Page - Sanyo Semicon Device

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Ordering number : EN4795C
32896HA (OT)/O3194TH/81094TH (OT) No. 4795-1/30
Overview
The LC321664AJ, AM, AT is a CMOS dynamic RAM
operating on a single 5 V power source and having a
65536-word
× 16-bit configuration. Equipped with large
capacity capabilities, high-speed transfer rates and low
power dissipation, this series is suited for a wide variety of
applications ranging from computer main memory and
expansion memory to commercial equipment.
Address input utilizes a multiplexed address bus which
permits it to be enclosed in compact plastic packages of
SOJ 40-pin, SOP 40-pin and TSOP 44-pin. Refresh rates
are within 4 ms with 256 row address (A0 to A7) selection
and support RAS-only refresh, CAS-before-RAS refresh
and hidden refresh settings.
There are functions such as page mode, read-modify-
write, and byte-write.
Features
• 65536-word
× 16-bit configuration
• Single 5 V ±10% power supply
• All input and output (I/O) TTL compatible
• Supports fast page mode, read-modify-write, and byte-
write.
• Supports output caching control using early write and
Output Enable (OE) control.
• 4 ms refresh using 256 refresh cycles
• Supports RAS-only refresh, CAS-before-RAS refresh
and hidden refresh.
• Packages
SOJ 40-pin
(400 mil) plastic package: LC321664AJ
SOP 40-pin (525 mil) plastic package: LC321664AM
TSOP 44-pin (400 mil) plastic package: LC321664AT
• RAS access time/column address access time/CAS
access time/ cycle time/power dissipation
Package Dimensions
unit: mm
3200-SOJ40
unit : mm
3195-SOP40
SANYO:SOJ40
[LC321664AJ]
SANYO:SOP40
[LC321664AM]
LC321664AJ, AM, AT-80
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-0005 JAPAN
1 MEG (65536 words
× 16 bits) DRAM
Fast Page Mode, Byte Write
CMOS LSI
Parameter
LC321664AJ, AM, AT-80
RAS access time
80 ns
Column address access time
45 ns
CAS access time
30 ns
Cycle time
135 ns
Power dissipation
During operation
633 mW
(max.)
During standby
5.5 mW (CMOS level)/11 mW (TTL level)


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