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LC321664AT-80 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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LC321664AT-80 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 30 page Ordering number : EN4795C 32896HA (OT)/O3194TH/81094TH (OT) No. 4795-1/30 Overview The LC321664AJ, AM, AT is a CMOS dynamic RAM operating on a single 5 V power source and having a 65536-word × 16-bit configuration. Equipped with large capacity capabilities, high-speed transfer rates and low power dissipation, this series is suited for a wide variety of applications ranging from computer main memory and expansion memory to commercial equipment. Address input utilizes a multiplexed address bus which permits it to be enclosed in compact plastic packages of SOJ 40-pin, SOP 40-pin and TSOP 44-pin. Refresh rates are within 4 ms with 256 row address (A0 to A7) selection and support RAS-only refresh, CAS-before-RAS refresh and hidden refresh settings. There are functions such as page mode, read-modify- write, and byte-write. Features • 65536-word × 16-bit configuration • Single 5 V ±10% power supply • All input and output (I/O) TTL compatible • Supports fast page mode, read-modify-write, and byte- write. • Supports output caching control using early write and Output Enable (OE) control. • 4 ms refresh using 256 refresh cycles • Supports RAS-only refresh, CAS-before-RAS refresh and hidden refresh. • Packages SOJ 40-pin (400 mil) plastic package: LC321664AJ SOP 40-pin (525 mil) plastic package: LC321664AM TSOP 44-pin (400 mil) plastic package: LC321664AT • RAS access time/column address access time/CAS access time/ cycle time/power dissipation Package Dimensions unit: mm 3200-SOJ40 unit : mm 3195-SOP40 SANYO:SOJ40 [LC321664AJ] SANYO:SOP40 [LC321664AM] LC321664AJ, AM, AT-80 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-0005 JAPAN 1 MEG (65536 words × 16 bits) DRAM Fast Page Mode, Byte Write CMOS LSI Parameter LC321664AJ, AM, AT-80 RAS access time 80 ns Column address access time 45 ns CAS access time 30 ns Cycle time 135 ns Power dissipation During operation 633 mW (max.) During standby 5.5 mW (CMOS level)/11 mW (TTL level) |
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