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LC33832P Datasheet(PDF) 1 Page - Sanyo Semicon Device

Part # LC33832P
Description  256 K (32768 words X 8 bits) Pseudo-SRAM
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

LC33832P Datasheet(HTML) 1 Page - Sanyo Semicon Device

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Ordering number : EN4430C
22897HA (OT)/52595TH (OT)/N1993JN/40893JN A8-9957, 58, 59, No. 4430-1/9
Overview
The LC33832 series is composed of pseudo static RAM
that operates on a single 5 V power supply and is
organized as 32768 words
× 8 bits. By using memory
cells each composed of a single transistor and capacitor,
together with peripheral CMOS circuitry, this series
achieves ease of use with high density, high speed, and
low power dissipation. The LC33832 series can easily
accomplish auto-refresh and self-refresh by means of
OE/RFSH input. As with asynchronous static RAM, WE
input uses a system for incorporating input data at the WE
rise, thereby facilitating interfacing with a microcomputer.
The LC33832 series features pin compatibility with 256 K
static RAM (the LC36256A series), and available
packages are the standard 28-pin DIP with widths of 600
mil or 300 mil, and the SOP with a width of 450 mil.
CE-only refresh can be accomplished by selecting address
256 (A0 to A7) within 4 ms.
Features
• 32768 words
× 8 bits configuration
• Single 5 V ±10% power supply
• All input and output (I/O) TTL compatible
• Fast access times and low power dissipation
• 4 ms refresh using 256 refresh cycle
• CE-only refresh, auto-refresh, and self-refresh
• Low-power version: 100 µA self-refresh current
• Package
DIP28-pin (600 mil) plastic package: LC33832P, PL
DIP28-pin (300 mil) plastic package: LC33832S, SL
SOP28-pin (450 mil) plastic package: LC33832M, ML
Package Dimensions
unit: mm
3012A-DIP28
unit: mm
3133-DIP28
SANYO: DIP28
[LC33832P, PL]
SANYO: DIP28
[LC33832S, SL]
LC33832P, S, M, PL, SL, ML-70/80/10
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
256 K (32768 words
× 8 bits) Pseudo-SRAM
CMOS LSI
Parameter
LC33832P, S, M, PL, SL, ML
-70
-80
-10
CE access time
70 ns
80 ns
100 ns
OE access time
30 ns
35 ns
40 ns
Cycle time
115 ns
130 ns
160 ns
Current drain
Operating
65 mA
60 mA
50 mA
Standby
1 mA/100 µA (L version)
• CE access time/OE access time/Cycle time/Current drain


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