E-Line

TO92 Compatible

NPN SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ISSUE 3 - NOVEMBER 1995

FEATURES

* Very low saturation voltage

APPLICATIONS

* Darlington replacement

* Battery powered circuits

* Motor drivers

* Relay / solenoid drivers

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

180

V

Collector-Emitter Voltage

180

V

Emitter-Base Voltage

5V

Peak Pulse Current

1A

Continuous Collector Current

0.5

A

Practical Power Dissipation *

1.5

W

derate above 25°C

1

5.7

W

mW/°C

Operating and Storage Temperature Range

-55 to +200

°C

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

PARAMETER

SYMBOL

MIN.

TYP.

MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

180

V

Collector-Emitter Breakdown

Voltage

180

V

Emitter-Base Breakdown

Voltage

5V

Collector Cut-Off Current

0.1

µ

A

Emitter Cut-Off Current

0.1

µ

A

Collector-Emitter Saturation

Voltage

0.2

0.2

0.25

V

V

V

Base-Emitter

Saturation Voltage

0.9

V

Base-Emitter

Turn-On Voltage

0.9

V

Static Forward Current

Transfer Ratio

500

150

ZTX696B

3-247

ZTX696B

3-248

C

B

E

PARAMETER

SYMBOL

MIN.

TYP.

MAX. UNIT CONDITIONS.

Transition Frequency

70

MHz

f=50MHz

Input Capacitance

200

pF

Output Capacitance

6pF

Switching Times

80

4400

ns

ns

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

MAX.

UNIT

Junction to Case

175

116

70

°C/W

°C/W

°C/W

† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.