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ZTX696B Datasheet(PDF) 1 Page - Diodes Incorporated |
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ZTX696B Datasheet(HTML) 1 Page - Diodes Incorporated |
1 / 3 page E-Line TO92 Compatible NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - NOVEMBER 1995 FEATURES * 180 Volt VCEO * Gain of 500 at IC=100mA * Very low saturation voltage APPLICATIONS * Darlington replacement * Battery powered circuits * Motor drivers * Relay / solenoid drivers ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 180 V Emitter-Base Voltage VEBO 5V Peak Pulse Current ICM 1A Continuous Collector Current IC 0.5 A Practical Power Dissipation * Ptotp 1.5 W Power Dissipation at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb= 25°C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 180 V IC=100µA Collector-Emitter Breakdown Voltage V(BR)CEO 180 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5V IE=100µA Collector Cut-Off Current ICBO 0.1 µ A VCB=145V Emitter Cut-Off Current IEBO 0.1 µ A VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.2 0.2 0.25 V V V IC=50mA, IB=0.5mA* IC=100mA, IB=2mA* IC=200mA, IB=5mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=200mA, IB=5mA* Base-Emitter Turn-On Voltage VBE(on) 0.9 V IC=200mA, VCE=5V* Static Forward Current Transfer Ratio hFE 500 150 IC=100mA, VCE=5V* IC=200mA, VCE=5V* ZTX696B 3-247 ZTX696B 3-248 C B E ELECTRICAL CHARACTERISTICS (at Tamb= 25°C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Transition Frequency fT 70 MHz IC=50mA, VCE=5V f=50MHz Input Capacitance Cibo 200 pF VEB=0.5V, f=1MHz Output Capacitance Cobo 6pF VCE=10V, f=1MHz Switching Times ton toff 80 4400 ns ns IC=100mA, IB!=10mA IB2=10mA, VCC=50V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. UNIT Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) 175 116 70 °C/W °C/W °C/W Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. |
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