www.vishay.com

Document Number: 91401

2

S10-0811-Rev. A, 12-Apr-10

SiHP16N50C, SiHB16N50C, SiHF16N50C

Vishay Siliconix

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

Note

• The information shown here is a preliminary product proposal, not a commercial product data sheet. Vishay Siliconix is not committed to

produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell

such products.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TO-220 FULLPAK

UNIT

Maximum Junction-to-Ambient

62

65

°C/W

Maximum Junction-to-Case (Drain)

0.5

3.3

40

-

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

500

-

-

V

ΔV

-

0.6

-

V/°C

Gate-Source Threshold Voltage (N)

3.0

-

5.0

V

Gate-Source Leakage

-

-

± 100

nA

Zero Gate Voltage Drain Current

-

-

50

μA

-

-

250

Drain-Source On-State Resistance

-

0.31

0.38

Ω

-

3

-

S

Dynamic

Input Capacitance

f = 1.0 MHz

-

1900

-

pF

Output Capacitance

-

230

-

Reverse Transfer Capacitance

-24

-

Total Gate Charge

-45

68

nC

Gate-Source Charge

-18

-

Gate-Drain Charge

-22

-

Turn-On Delay Time

-27

-

ns

Rise Time

-

156

-

Turn-Off Delay Time

-29

-

Fall Time

-31

-

Gate Input Resistance

f = 1 MHz, open drain

-

1.6

-

Ω

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

--

16

A

Pulsed Diode Forward Current

--

30

Body Diode Voltage

-

-

1.8

V

Body Diode Reverse Recovery Time

-

555

-

ns

Body Diode Reverse Recovery Charge

-5.5

-

μC

Body Diode Reverse Recovery Current

-18

-

A

S

D

G