BT139-600E datasheet(7/14 Pages) NXP

Part #	BT139-600E

Description	4Q Triac High blocking voltage capability

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Manufacturer	NXP [NXP Semiconductors]

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BT139-600E

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Product data sheet

Rev. 04 — 24 February 2011

7 of 14

NXP Semiconductors

BT139-600E

4Q Triac

6.

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

IGT

gate trigger current

VD =12V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; see Figure 7

-2.5

10

mA

VD =12V; IT = 0.1 A; T2+ G-;

Tj = 25 °C; see Figure 7

-4

10

mA

VD =12V; IT = 0.1 A; T2- G-;

Tj = 25 °C; see Figure 7

-5

10

mA

VD =12V; IT = 0.1 A; T2- G+;

Tj = 25 °C; see Figure 7

-11

25

mA

IL

latching current

VD =12V; IG = 0.1 A; T2+ G+;

Tj = 25 °C; see Figure 8

-3.2

30

mA

VD =12V; IG = 0.1 A; T2+ G-;

Tj = 25 °C; see Figure 8

-

1640mA

VD =12V; IG = 0.1 A; T2- G-;

Tj = 25 °C; see Figure 8

-4

30

mA

VD =12V; IG = 0.1 A; T2- G+;

Tj = 25 °C; see Figure 8

-5.5

40

mA

IH

holding current

VD =12V; Tj = 25 °C; see Figure 9

-4

45

mA

VT

on-state voltage

IT =20A; Tj =25°C; see Figure 10

-1.2

1.6

V

VGT

gate trigger voltage

VD =12V; IT = 0.1 A; Tj =25 °C;

see Figure 11

-0.7

1.5

V

VD =400 V; IT =0.1 A; Tj = 125 °C

0.25

0.4

-

V

ID

off-state current

VD =402 V; Tj = 125 °C

-

0.1

0.5

mA

Dynamic characteristics

dVD/dt

rate of rise of off-state voltage

VDM = 402 V; Tj =125 °C;

exponential waveform; gate open

circuit

-50

-

V/µs

tgt

gate-controlled turn-on time

ITM =20A; VD =600 V;

IG = 100 mA; dIG/dt = 5 A/µs

-2

-µs

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