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BUK7212-55B Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUK7212-55B Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 14 page BUK7212-55B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 23 February 2011 6 of 14 NXP Semiconductors BUK7212-55B N-channel TrenchMOS standard level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID =0.25mA; VGS =0V; Tj = 25 °C 55 --V ID =0.25mA; VGS =0V; Tj = -55 °C 50 - - V VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =25°C; see Figure 8 234V ID =1mA; VDS =VGS; Tj = 185 °C; see Figure 8 0.9 --V ID =1mA; VDS =VGS; Tj =-55 °C; see Figure 8 --4.4 V IDSS drain leakage current VDS =55V; VGS =0V; Tj = 25 °C - 0.02 1 µA VDS =55V; VGS =0V; Tj = 185 °C - - 500 µA IGSS gate leakage current VGS =20V; VDS =0V; Tj = 25 °C - 2 100 nA VGS =-20 V; VDS =0V; Tj = 25 °C - 2 100 nA RDSon drain-source on-state resistance VGS =10V; ID =25A; Tj = 185 °C; see Figure 9; see Figure 10 --25 m Ω VGS =10V; ID =25A; Tj =25°C; see Figure 9; see Figure 10 - 10.2 12 m Ω Dynamic characteristics QG(tot) total gate charge ID =25A; VDS =44V; VGS =10V; Tj =25°C; see Figure 11 -35 - nC QGS gate-source charge - 9 - nC QGD gate-drain charge - 12 - nC Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; Tj =25°C; see Figure 12 - 1840 2453 pF Coss output capacitance - 379 455 pF Crss reverse transfer capacitance - 165 226 pF td(on) turn-on delay time VDS =25V; RL =1.2 Ω; VGS =10V; RG(ext) =10 Ω; Tj =25 °C -18 - ns tr rise time - 91 - ns td(off) turn-off delay time - 48 - ns tf fall time - 45 - ns LD internal drain inductance measured from drain to center of die; Tj =25°C -2.5 -nH LS internal source inductance measured from source lead to source bond pad; Tj =25°C -75 - nH Source-drain diode VSD source-drain voltage IS =18A; VGS =0V; Tj =25°C; see Figure 13 - 0.85 1.2 V trr reverse recovery time IS =20A; dIS/dt = -100 A/µs; VGS =-10 V; VDS =30 V; Tj =25°C -67 - ns Qr recovered charge - 65 - nC |
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