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MIC2159 Datasheet(PDF) 8 Page - Micrel Semiconductor |
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MIC2159 Datasheet(HTML) 8 Page - Micrel Semiconductor |
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8 / 16 page  Micrel, Inc. MIC2159 March 2009 8 M9999-030509-B MOSFET Gate Drive The MIC2159 high-side drive circuit is designed to switch an N-Channel MOSFET. The Functional Block Diagram shows a bootstrap circuit, consisting of D1 and CBST. This circuit supplies energy to the high-side drive circuit. Capacitor CBST circuit is charged while the low- side MOSFET is on and the voltage on the VSW pin is approximately 0V. When the high-side MOSFET driver is turned on, energy from CBST is used to turn the MOSFET on. As the MOSFET turns on, the voltage on the VSW pin increases to approximately VIN. Diode D1 is reversed biased and CBST floats high while continuing to keep the high-side MOSFET on. When the low-side switch is turned back on, CBST is recharged through D1. The drive voltage is derived from the internal 5V VDD bias supply. The nominal low-side gate drive voltage is 5V and the nominal high-side gate drive voltage is approximately 4.5V due the voltage drop across D1. An approximate 50ns delay between the low-side(off) to high-side(on) driver transitions is used to prevent current from simultaneously flowing unimpeded through both MOSFETs (shoot-through). Adaptive gate drive is implemented on the high-side(off) to low-side(on) driver transition to reduce losses in the flywheel diode and to prevent shoot-through. This is operated by detecting the VSW pin; once this pin is detected to reach 1.5v, the high-side MOSFET can be assumed to be off and the low side driver is enabled. |
Similar Part No. - MIC2159_09 |
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Similar Description - MIC2159_09 |
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