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RJH60F7ADPK Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # RJH60F7ADPK
Description  Silicon N Channel IGBT High Speed Power Switching
Download  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJH60F7ADPK Datasheet(HTML) 5 Page - Renesas Technology Corp

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RJH60F7ADPK
Preliminary
R07DS0237EJ0300 Rev.3.00
Page 5 of 7
Jan 05, 2011
050
25
150
75
125
100
050
25
150
75
125
100
800
400
1600
1200
0
120
80
40
200
160
0
Switching Characteristics (Typical) (3)
100
1000
10
td(off)
td(on)
tf
tr
Junction Temperature Tj (°C)
(Inductive load)
Junction Temperature Tj (°C)
(Inductive load)
Switching Characteristics (Typical) (4)
Eoff
Eon
1
10
200
100
1
10
200
100
10
1000
100
100000
10000
Collector Current IC (A)
(Inductive load)
Eoff
Eon
Switching Characteristics (Typical) (1)
Switching Characteristics (Typical) (2)
Collector Current IC (A)
(Inductive load)
VCC = 400 V, VGE = 15 V
Rg = 5
Ω, Tj = 150°C
tr includes the diode recovery
VCC = 400 V, VGE = 15 V
Rg = 5
Ω, Tj = 150°C
Eon includes the diode recovery
VCC = 400 V, VGE = 15 V
IC = 30 A, Rg = 5 Ω
Eon includes the diode recovery
VCC = 400 V, VGE = 15 V
IC = 30 A, Rg = 5 Ω
tr includes the diode recovery
td(off)
td(on)
tf
tr


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