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RJK0202DSP Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJK0202DSP Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page R07DS0238EJ0220 Rev.2.20 Page 1 of 6 Jan 05, 2011 Preliminary Datasheet RJK0202DSP Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 2.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.0 m typ. (at VGS = 4.5 V) Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8<FP-8DAV>) 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain G D SS S D DD 4 1 23 56 7 8 1 2 3 4 5 6 7 8 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 20 V Gate to source voltage VGSS ±12 V Drain current ID 16 A Drain peak current ID(pulse) Note1 128 A Body-drain diode reverse drain current IDR 16 A Avalanche current IAP Note 2 15 A Avalanche energy EAR Note 2 45 mJ Channel dissipation Pch Note3 2.0 W Channel to ambient thermal impedance ch-a Note3 62.5 C/W Channel temperature Tch 150 C Storage temperature Tstg –55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25 C, Rg 50 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s R07DS0238EJ0220 Rev.2.20 Jan 05, 2011 |
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