R07DS0238EJ0220 Rev.2.20

Page 1 of 6

Jan 05, 2011

RJK0202DSP

Silicon N Channel Power MOS FET

Power Switching

Features

 High speed switching

 Capable of 2.5 V gate drive

 Low drive current

 High density mounting

 Low on-resistance

Outline

RENESAS Package code: PRSP0008DD-D

(Package name: SOP-8<FP-8DAV>)

1, 2, 3

Source

4

Gate

5, 6, 7, 8 Drain

G

D

SS S

D DD

4

1 23

56 7 8

1 2

3 4

5

6

7

8

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

20

V

Gate to source voltage

±12

V

Drain current

16

A

Drain peak current

Note1

128

A

Body-drain diode reverse drain current

16

A

Avalanche current

Note 2

15

A

Avalanche energy

Note 2

45

mJ

Channel dissipation

Pch

Note3

2.0

W

Channel to ambient thermal impedance

62.5

C/W

Channel temperature

Tch

150

C

Storage temperature

Tstg

–55 to +150

C

Notes: 1. PW

 10 s, duty cycle  1%

2. Value at Tch = 25

C, Rg  50 

3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW

 10s

R07DS0238EJ0220

Rev.2.20

Jan 05, 2011