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ZXLD1322 Datasheet(PDF) 6 Page - Diodes Incorporated |
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ZXLD1322 Datasheet(HTML) 6 Page - Diodes Incorporated |
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6 / 17 page  ZXLD1322 ZXLD1322 Document number: DS32166 Rev. 3 - 2 6 of 17 www.diodes.com April 2010 © Diodes Incorporated A Product Line of Diodes Incorporated Switching NPN Transistor Symbol Parameter Condition Min. Typ. Max. Unit ISW Average continuous switch current (c) 2 A IBON(max) Maximum base current into switch transistor from internal drive circuit (d) 2V<VIN<18V BIAS pin at 0V 30 50 70 mA IBON Base current into switch transistor using external resistor (RBASE) from BIAS pin to ground RBIAS = 1680Ω 10 mA V(BR)CE Collector-Emitter breakdown voltage IC = 10mA 15 V VCE(sat) Collector-Emitter saturation voltage IC = 0.1A, IB = 10mA IC = 2A, IB = 50mA (e) 50 120 mV hFE Static forward current transfer ratio IC = 200mA, VCE = 2V IC = 2A, VCE = 2V 209 116 COBO Output capacitance VCB = 10V,f = 1MHz 64 pF t(on) Turn-on time Ic = 0 to IC = 2A VIN = 10V 30 ns t(off) Turn-off time IC = 2A to Ic < 100μA 28 ns High-Side Current Monitor Symbol Parameter Condition Min. Typ. Max. Unit VM_VIN Supply voltage 2.5 18 V VMON Sense voltage =V(VIN) – VM_VIN 0 100 200 mV I_M_VIN Input current Measured into M_VIN pin 0.08 1 µA TCO(MON) Temperature coefficient VMON=10mV VMON=100mV 370 150 ppm/K BW Bandwidth VMON=10mV VMON=100mV 350 2.5 KHz Mhz Gm Tran conductance ΔIOUT/ΔVMON 1 mA/V ACC Accuracy RM = 0.1Ω VMON = 100mV -3 3 % Reference Current Monitor Symbol Parameter Condition Min. Typ. Max. Unit VADJ Adjust Voltage 0 500 mV TCO (MON) Temperature coefficient VADJ = 50mV VADJ = 500mV 160 200 ppm/K BW Bandwidth VADJ = 50mV VADJ = 500mV 275 3 KHz Mhz Gm Tran conductance ΔIOUT/ΔVADJ 200 µA/V ACC Accuracy VADJ = 500mV -3 3 % Notes: (c) Measured under pulse conditions. (d) This current is measured via the collectors and emitters of the switch with these connected to ground (0V) (e) Measured under pulse conditions. Peak Current = IC |
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