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ZXM62N03GTC Datasheet(PDF) 2 Page - Diodes Incorporated |
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ZXM62N03GTC Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 7 page ZXM62N03G ISSUE 1 - OCTOBER 2002 2 PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGS 20 V Continuous Drain Current (VGS=10V; TA=25°C)(b) (VGS=10V; TA=70°C)(b) (VGS=10V; TA=25°C)(a) ID 4.7 3.8 3.4 A Pulsed Drain Current (c) IDM 16 A Continuous Source Current (Body Diode) (b) IS 2.6 A Pulsed Source Current (Body Diode)(c) ISM 16 A Power Dissipation at TA=25°C (a) Linear Derating Factor PD 2.0 16 W mW/°C Power Dissipation at TA=25°C (b) Linear Derating Factor PD 3.9 31 W mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) RθJA 62.5 °C/W Junction to Ambient (b) RθJA 32 °C/W THERMAL RESISTANCE NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature. |
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