ZXMC4559DN8

ISSUE 5 - MAY 2005

5

SEMICO NDUC TORS

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT CONDITIONS

STATIC

Drain-Source Breakdown Voltage

-60

V

Zero Gate Voltage Drain Current

-1.0

Gate-Body Leakage

100

nA

Gate-Source Threshold Voltage

-1.0

V

I

D

Static Drain-Source On-State

Resistance

(1)

0.085

0.125

Forward Transconductance

(1) (3)

7.2

S

DYNAMIC

(3)

Input Capacitance

1021

pF

f=1MHz

Output Capacitance

83.1

pF

Reverse Transfer Capacitance

56.4

pF

SWITCHING

(2) (3)

Turn-On Delay Time

3.5

ns

Rise Time

4.1

ns

Turn-Off Delay Time

35

ns

Fall Time

10

ns

Gate Charge

12.1

nC

Total Gate Charge

24.2

nC

Gate-Source Charge

2.5

nC

Gate-Drain Charge

3.7

nC

SOURCE-DRAIN DIODE

Diode Forward Voltage

(1)

-0.85

-0.95

V

Reverse Recovery Time

(3)

29.2

ns

di/dt= 100A/

µs

Reverse Recovery Charge

(3)

39.6

nC

P-CHANNEL

NOTES

(1) Measured under pulsed conditions. Width

300 s. Duty cycle

2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.