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ZXMN6A11DN8 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # ZXMN6A11DN8
Description  60V SO8 Dual N-channel enhancement mode MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMN6A11DN8 Datasheet(HTML) 2 Page - Diodes Incorporated

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ZXMN6A11DN8
Issue 3 - September 2006
2
www.zetex.com
© Zetex Semiconductors plc 2006
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction
temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
Parameter
Symbol
Limit
Unit
Drain-source voltage
VDSS
60
V
Gate-source voltage
VGS
±20
V
Continuous drain current
@ VGS= 10V; Tamb=25°C(b)
ID
3.2
A
@ VGS= 10V; Tamb=70°C(b)
2.6
@ VGS= 10V; Tamb=25°C(a)
2.5
Pulsed drain current(c)
IDM
13.7
A
Continuous source current (body diode)(b)
IS
3.1
A
Pulsed source current (body diode)(c)
ISM
13.7
A
Power dissipation at Tamb =25°C(a)(d)
PD
1.25
W
Linear derating factor
10
mW/°C
Power dissipation at Tamb =25°C(a)(e)
PD
1.8
W
Linear derating factor
14
mW/°C
Power dissipation at Tamb =25°C(b)(d)
PD
2.1
W
Linear derating factor
17
mW/°C
Operating and storage temperature range
Tj, Tstg
-55 to +150
°C
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to ambient(a)(d)
R JA
100
°C/W
Junction to ambient(a)(e)
R JA
70
°C/W
Junction to ambient(b)(d)
R JA
60
°C/W


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