ZXMN6A25N8

Issue 1 - April 2008

2

© Zetex Semiconductors plc 2008

www.zetex.com

Absolute maximum ratings

Parameter

Symbol

Limit

Unit

Drain-Source voltage

60

V

Gate-Source voltage

± 20

V

(b)

(b)

(a)

(a)(d)

5.7

4.5

4.3

7.0

A

Pulsed Drain current

(c)

25.7

A

Continuous Source current (Body diode)

(b)

4.1

A

Pulsed Source current (Body diode)

(c)

25.7

A

(a)

Linear derating factor

1.56

12.5

W

mW/

°C

(b)

Linear derating factor

2.8

22.2

W

mW/

°C

(d)

Linear derating factor

4.14

33.1

W

mW/

°C

Operating and storage temperature range

-55 to 150

°C

Thermal resistance

Parameter

Symbol

Value

Unit

Junction to ambient

(a)

80

°C/W

Junction to ambient

(b)

45

°C/W

Junction to lead

(d)

30.2

°C/W

NOTES:

(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still

air conditions.

(b) Mounted on FR4 PCB measured at t

≤ 10 sec.

(c) Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction

temperature.

(d) Thermal resistance from junction to solder-point (at the end of the drain lead).