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CEF09N7G Datasheet(PDF) 2 Page - Chino-Excel Technology |
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CEF09N7G Datasheet(HTML) 2 Page - Chino-Excel Technology |
2 / 4 page Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 1.0 0.85 2 4 -100 100 1 Ω V nA nA µ A V 2 Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Typ Max 700 VDS = 700V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 4.5A VDD = 200V, ID = 5A, VGS = 10V, RGEN = 9.1Ω VDS = 480V, ID = 5A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0 MHz 1765 200 20 24 9 72 10 46 6.7 18.5 9 1.4 pF pF pF ns ns ns ns nC nC nC A V 4 IS f VGS = 0V, IS = 9A g Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 6A . g.Full package VSD test condition IS = 6A . h.L = 15mH, IAS = 7.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C CEP09N7G/CEB09N7G CEF09N7G |
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