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CEP16N10L Datasheet(PDF) 1 Page - Chino-Excel Technology |
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1 / 4 page N-Channel Enhancement Mode Field Effect Transistor CEP16N10L/CEB16N10L FEATURES 100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. 1 S G D G S S D D G CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 Lead free product is acquired. http://www.cetsemi.com RDS(ON) = 125mΩ @VGS = 5V. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM 100 0.48 60 60 15.2 ±20 V W A A V W/ C Operating and Store Temperature Range TJ,Tstg -55 to 175 C Rev 1. 2010.Jan. Details are subject to change without notice . Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 50 2.5 RθJC RθJA PRELIMINARY |
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