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ZXMP6A13FTA Datasheet(PDF) 4 Page - Diodes Incorporated |
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ZXMP6A13FTA Datasheet(HTML) 4 Page - Diodes Incorporated |
4 / 8 page ZXMP6A13F Document Number DS32014 Rev. 4 - 2 4 of 8 www.diodes.com November 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP6A13F Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -60 ⎯ ⎯ V ID = -250μA, VGS = 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -0.5 μA VDS = -60V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) -1.0 ⎯ ⎯ V ID = -250μA, VDS = VGS Static Drain-Source On-Resistance (Note 4) RDS (ON) ⎯ ⎯ 0.400 Ω VGS = -10V, ID = -0.9A 0.600 VGS = -4.5V, ID = -0.8A Forward Transconductance (Notes 4 and 6) gfs ⎯ 1.8 ⎯ S VDS = -15V, ID = -0.9A Diode Forward Voltage (Note 4) VSD ⎯ -0.85 -0.95 V TJ = 25°C, IS = -0.8A, VGS = 0V Reverse Recovery Time (Note 6) trr ⎯ 21.1 ⎯ ns TJ = 25°C, IF = -0.9A, di/dt = 100A/ μs Reverse Recovery Charge (Note 6) Qrr ⎯ 19.3 ⎯ nC DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Ciss ⎯ 219 ⎯ pF VDS = -30V, VGS = 0V f = 1.0MHz Output Capacitance Coss ⎯ 25.7 ⎯ Reverse Transfer Capacitance Crss ⎯ 20.5 ⎯ Turn-On Delay Time (Note 5) tD(on) ⎯ 1.6 ⎯ ns VDD = -30V, ID = -1A, RG ≅ 6.0Ω, VGS = -10V Turn-On Rise Time (Note 5) tr ⎯ 2.2 ⎯ Turn-Off Delay Time (Note 5) tD(off) ⎯ 11.2 ⎯ Turn-Off Fall Time (Note 5) tf ⎯ 5.7 ⎯ Total Gate Charge (Note 5) Qg ⎯ 2.9 ⎯ nC VDS = -30V, VGS = -4.5V, ID = -0.9A Total Gate Charge (Note 5) Qg ⎯ 5.9 ⎯ nC VDS = -30V, VGS = -10V, ID = -0.9A Gate-Source Charge (Note 5) Qgs ⎯ 0.74 ⎯ Gate-Drain Charge (Note 5) Qgd ⎯ 1.5 ⎯ Notes: 4. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperature. 6. For design aid only, not subject to production testing. |
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