ISSUE 1 - DECEMBER 1999

ZXT13P12DE6

SuperSOT4™

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY

V

;I

DESCRIPTION

This new 4th generation ultra low saturation transistor utilises the Zetex

matrix structure combined with advanced assembly techniques to give

extremely low on state losses. This makes it ideal for high efficiency, low

voltage switching applications.

FEATURES

• Extremely Low Equivalent On Resistance

• Extremely Low Saturation Voltage

• h

• I

• SOT23-6 package

APPLICATIONS

• DC - DC Converters

• Power Management Functions

• Power switches

• Motor control

ORDERING INFORMATION

DEVICE

REEL SIZE

(inches)

TAPE WIDTH

(mm)

QUANTITY

PER REEL

ZXT13P12DE6TA

7

8mm embossed

3000 units

ZXT13P12DE6TC

13

8mm embossed

10000 units

DEVICE MARKING

P12D

Top View

1

SOT23-6

C

E

B

C

C

C