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ZXTP03200BG Datasheet(PDF) 2 Page - Diodes Incorporated

Part # ZXTP03200BG
Description  200V PNP Low VCE(sat) transistor in SOT223
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXTP03200BG Datasheet(HTML) 2 Page - Diodes Incorporated

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ZXTP03200BG
Absolute Maximum Ratings
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
-220
V
Collector-Emitter Voltage
VCEO
-200
V
Emitter-Base Voltage
VEBO
-7
V
Continuous Collector Current
(a)
IC
-2
A
Base Current
IB
-1
A
Peak Pulse Current
ICM
-5
A
Power Dissipation at TA =25°C
(a)
Linear Derating Factor
PD
1.25
10
W
mW/
°C
Power Dissipation at TA =25°C
(b)
Linear Derating Factor
PD
1.65
13.2
W
mW/
°C
Power Dissipation at TA =25°C
(c)
Linear Derating Factor
PD
3
24
W
mW/
°C
Power Dissipation at TA =25°C
(d)
Linear Derating Factor
PD
5.8
46.5
W
mW/
°C
Power Dissipation at TC =25°C
(e)
Linear Derating Factor
PD
11.9
95.2
W
mW/
°C
Operating and Storage Temperature Range
Tj, Tstg
-55 to 150
°C
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction to Ambient
(a)
RθJA
100
°C/W
Junction to Ambient
(b)
RθJA
76
°C/W
Junction to Ambient
(c)
RθJA
41.6
°C/W
Junction to Ambient
(d)
RθJA
21.5
°C/W
Junction to Lead
(e)
RθJL
10.5
°C/W
NOTES:
(a)
For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still
air conditions.
(b)
Mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(c)
Mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(d)
As (c) above measured at t<5 seconds.
(e)
Junction to Lead from Collector Tab.Typical
Issue 1 - August 2008
2
© Diodes Incorporated 2008
www.zetex.com
www.diodes.com


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