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SSM3J134TU Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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SSM3J134TU Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page SSM3J134TU 2010-11-18 4 Drain current ID (A) |Yfs| – ID 0.1 -10 1 10 -0.1 -1 3 0.3 -0.01 Common Source VDS = -3 V Ta = 25°C Pulse Test Drain current ID (A) t – ID 1 -0.001 1000 -0.1 10000 -1 -10 100 tf Common Source VDD = -10 V VGS = 0 to -2.5 V Ta = 25 °C RG = 4.7Ω 10 -0.01 toff tr ton Total gate charge Qg (nC) Dynamic Input Characteristic 0 0 4 8 -4 -8 10 -6 -2 2 6 VDD = - 16 V VDD = - 10 V Common Source ID = -2.0 A Ta = 25°C Drain–source voltage VDS (V) IDR – VDS 10 0 0.1 1 0.001 0.01 0.5 1.0 1.5 Common Source VGS = 0 V Pulse Test G D S IDR -25 °C Ta =100 °C 25 °C Drain-source voltage VDS (V) C – VDS 10 -0.1 -1 -10 -100 100 1000 300 30 Common Source Ta = 25 °C f = 1 MHz VGS = 0 V Ciss Coss Crss |
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