ZXTP03200BZTA datasheet(4/7 Pages) DIODES

Part #	ZXTP03200BZTA

Description	200V PNP LOW VCE(sat ) TRANSISTOR IN SOT-89

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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4 / 7 page

ZXTP03200BZ

Document Number DS31902 Rev. 2 - 2

4 of 7

www.diodes.com

August 2009

A Product Line of

Diodes Incorporated

ZXTP03200BZ

20 0V P N P LO W V CE(sat) TRAN SIST OR IN SOT -89

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

V(BR)CBO

-220

-245

V

IC = -100µA

Collector-Emitter Breakdown Voltage

V(BR)CER

-220

-245

V

IC = -1µA, RBE ≤ 1kΩ

Collector-Emitter Breakdown Voltage (Note f)

V(BR)CEO

-220

-225

V

IC = -10mA

Emitter-Base Breakdown Voltage

V(BR)EBO

-7

-8.4

V

IE = -100µA

Collector-Base Cutoff Current

ICBO

<1

-50

-0.5

nA

µA

VCB = -200V

VCB = -200V, Tamb = 100°C

Emitter Cutoff Current

IEBO

<1

-10

nA

VEB = -6V

Static Forward Current Transfer Ratio (Note f)

hFE

100

20

195

179

50

5

300

IC = -10mA, VCE = -5V

IC = -1A, VCE = -5V

IC = -2A, VCE = -5V

IC = -5A, VCE = -5V

Collector-Emitter Saturation Voltage (Note f)

VCE(SAT)

-37

-120

-130

-160

-50

-155

-160

-260

mV

IC = -100mA, IB = -10mA

IC = -500mA, IB = -25mA

IC = -1A, IB = -100mA

IC = -2A, IB = -400mA

Base-Emitter Saturation Voltage (Note f)

VBE(sat)

-940

-1100

mV

IC = -2A, IB = -400mV

Base-Emitter Turn-On Voltage (Note f)

VBE(ON)

-840

-1000

mV

IC = -2A, VCE = -5V

Output Capacitance (Note f)

Cobo

31

pF

VCB = -10V. f = 1MHz

Transition Frequency

fT

105

MHz

VCE = -10V, IC = -100mA

f = 50MHz

Delay Time

td

21

ns

VCC = -50V, IC = -1A

IB1 = -IB2 = -100mA

Rise Time

tr

18

ns

Storage Time

Ts

680

ns

Fall Time

Tf

75

ns

Notes:

f. Measured under pulsed conditions. Pulse width = 300 µs. Duty cycle

≤ 2%

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