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ZXTP5401FL Datasheet(PDF) 2 Page - Diodes Incorporated |
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ZXTP5401FL Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 8 page ZXTP5401FL Issue 1 - August 2007 2 www.zetex.com © Zetex Semiconductors plc 2007 Absolute maximum ratings NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz weight copper, in still air conditions. Parameter Symbol Limit Unit Collector-base voltage VCBO -160 V Collector-emitter voltage VCEO -150 V Emitter-base voltage VEBO -5 V Continuous collector current(a) IC -600 mA Pulsed collector current ICM -1 A Power dissipation at Tamb =25°C(a) PD 330 mW Linear derating factor 2.64 mW/°C Operating and storage temperature range Tj, Tstg -55 to 150 °C Thermal resistance Parameter Symbol Limit Unit Junction to ambient(a) R JA 379 °C/W |
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