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ZXTP25012EZTA Datasheet(PDF) 1 Page - Diodes Incorporated |
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ZXTP25012EZTA Datasheet(HTML) 1 Page - Diodes Incorporated |
1 / 8 page Issue 1- December 2007 1 www.zetex.com © Zetex Semiconductors plc 2007 ZXTP25012EZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -12V hFE > 500 IC(cont) = 4.5A VCE(sat) < -70mV @ 1A RCE(sat) = 45m PD = 2.4W Complementary part number ZXTN25012EZ Description Packaged in the SOT89 outline this new low saturation 12V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • 4.5A continuous current • Up to 10A peak current • Very low saturation voltages •High gain Applications • High side switch • Battery charging • Regulator circuits • Buck converters • MOSFET gate drivers Ordering information Device marking •1L4 Device Reel size (inches) Tape width (mm) Quantity per reel ZXTP25012EZTA 7 12 1000 C E B C E Pinout - top view C B |
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