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2SC5076 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SC5076 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 5 page 2SC5076 2004-07-07 4 Collector-emitter voltage VCE (V) Safe Operating Area Base-emitter voltage VBE (V) IC – VBE Collector current IC (A) VBE (sat) – IC 5 0 0 1 2 3 4 0.4 0.8 1.2 1.6 2.0 2.4 Common emitter VCE = 1 V 25 Tc = 100°C −55 Tc = −55°C 25 Common emitter IC/IB = 20 100 10 0.5 1 5 3 0.1 0.03 0.1 0.3 1 3 10 0.3 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. IC max (continuous) IC max (pulsed)* DC operation (Ta = 25°C) 0.001 0.3 1 3 10 30 100 1 ms* 10 ms* VCEO max 0.5 0.3 5 10 1 0.1 3 0.05 0.03 0.1 0.005 0.003 0.01 50 0.5 5 |
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