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2SC5175 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # 2SC5175
Description  High-Current Switching Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC5175 Datasheet(HTML) 3 Page - Toshiba Semiconductor

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2SC5175
2004-07-26
3
Collector current IC (A)
VBE (sat) – IC
Collector-emitter voltage VCE (V)
Safe Operating Area
hEF – IC
Collector current IC (A)
Base-emitter voltage VBE (V)
IC – VBE
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
VCE (sat) – IC
0
0
4
8
2
4
6
8
IB = 10 mA
10
2
6
10
Common emitter
Tc = 25°C
40
20
30
50
100
60 70
80 90
0
0
4
0.4
1.2
1.6
Common emitter
VCE = 1 V
2
6
8
Tc = 100°C
25
−25
0.8
2.0
700
30
0.03
Common emitter
VCE = 1 V
50
100
300
500
0.3 0.5
5
Tc = 100°C
25
−25
0.05
1
10
10
3
0.1
0.5
10
0.01
0.03
0.1
0.3
1
3
10
3
1
5
0.01
0.3
0.1
Common emitter
IC/IB = 20
Tc = 100°C
25
−25
0.03
0.05
Common emitter
IC/IB = 20
0.1
0.03
0.5
0.05
0.1
0.3 0.5
10
1
0.3
3
5
Tc = 100°C
25
−25
3
5
1
*: Single nonrepetitive
pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.3
3
5
100
0.03
0.1
0.05
1
5
10
IC max
(continuous)
IC max (pulsed)*
10 ms*
100 ms*
DC operation
Ta = 25°C
VCEO
max
1
10
0.3
0.5
1 ms*
50
30
0.5
0.1
3


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