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2SC5465 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC5465 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page 2SC5465 2005-02-01 1 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5465 Switching Regulator and High Voltage Switching Applications High Speed DC-DC Converter Applications • Excellent switching times: tr = 0.7 µs (max) tf = 0.5 µs (max) (IC = 0.08 A) • High collector breakdown voltage: VCEO = 800 V Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 900 V Collector-emitter voltage VCEO 800 V Emitter-base voltage VEBO 7 V DC IC 0.8 Collector current Pulse ICP 1.5 A Base current IB 0.2 A Ta = 25°C 1.0 Collector power dissipation Tc = 25°C PC 20 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Industrial Applications Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) |
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