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2SC5550 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SC5550 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2SC5550 2004-07-26 2 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 320 V, IE = 0 ― ― 100 µA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 100 µA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 400 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 400 ― ― V hFE (1) VCE = 5 V, IC = 1 mA 13 ― ― DC current gain hFE (2) VCE = 5 V, IC = 0.04 A 20 ― 65 Collector-emitter saturation voltage VCE (sat) IC = 0.2 A, IB = 25 mA ― ― 1.0 V Base-emitter saturation voltage VBE (sat) IC = 0.2 A, IB = 25 mA ― ― 1.3 V Rise time tr ― ― 0.5 Storage time tstg ― ― 5.0 Switching time Fall time tf IB1 = 0.03 A, IB2 = −0.06 A, Duty cycle ≤ 1% ― ― 0.3 µs Marking 20 µs VCC ≈ 200 V IB2 IB1 Input IC Output C5550 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. |
Similar Part No. - 2SC5550_04 |
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Similar Description - 2SC5550_04 |
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