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2SD2241 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SD2241 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 4 page 2SD2241 2006-11-21 3 Collector current IC (A) hFE – IC Collector current IC (A) VCE (sat) – IC Collector-emitter voltage VCE (V) IC – VCE Base-emitter voltage VBE (V) IC – VBE Collector current IC (A) VBE (sat) – IC Collector-emitter voltage VCE (V) Safe Operating Area 300 0.1 Common emitter VCE = 2 V 500 1000 5000 10000 3000 0.3 0.5 1 3 5 10 25 −55 Tc = 100°C Common emitter IC/IB = 500 0.3 0.1 0.5 1 3 5 0.3 0.5 1 3 5 Tc = −55°C 25 100 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.03 0.3 0.05 0.1 0.3 0.5 1 3 5 10 1 3 10 30 100 IC max (pulsed)* 10 ms* 1 ms* 100 μs* VCEO max IC max (continuous) 100 ms* 0 0 IB = 200 μA Common emitter Tc = 25°C 300 250 1 2 3 4 5 1 2 3 4 5 6 350 400 450 500 Common emitter VCE = 2 V 0 0 25 −55 Tc = 100°C 1 2 3 4 0.8 1.6 2.4 3.2 4.0 0.1 Common emitter IC/IB = 500 0.5 1 3 5 10 0.3 0.5 1 3 5 Tc = −55°C 25 100 |
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