2SD2414(SM)

2009-11-11

1

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SD2414(SM)

High Current Switching Applications

Power Amplifier Applications

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-10S2A

Weight: 1.4 g (typ.)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

100

V

Collector-emitter voltage

80

V

Emitter-base voltage

5

V

Collector current

7

A

Base current

1

A

Ta = 25°C

1.5

Collector power

dissipation

Tc = 25°C

40

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C