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2SD2480 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SD2480 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SD2480 2006-11-21 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2480 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 8 V DC IC 2 Collector current Pulse ICP 3 A Base current IB 0.5 A Collector power dissipation PC 1.3 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Unit: mm JEDEC ― JEITA ― TOSHIBA 2-8M1A Weight: 0.55 g (typ.) BASE EMITTER ≈ 4 kΩ ≈ 800 Ω COLLECTOR |
Similar Part No. - 2SD2480_06 |
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Similar Description - 2SD2480_06 |
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