2SJ669

2009-09-29

1

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOS III)

2SJ669

Relay Drive, DC/DC Converter and Motor Drive

Applications

4-V gate drive

Characteristic

Symbol

Rating

Unit

Drain-source voltage

−60

V

−60

V

Gate-source voltage

±20

V

−5

A

Drain current

−20

A

Drain power dissipation

1.2

W

Single-pulse avalanche energy

(Note 2)

40.5

mJ

Avalanche current

−5

A

Repetitive avalanche energy (Note 3)

0.12

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Symbol

Max

Unit

Thermal resistance, channel to ambient

104

°C / W

Note 1: The channel temperature should not exceed 150℃ during use.

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-8M1B

Weight: 0.54 g (typ.)