Analog Integrated Circuit Device Data

8

Freescale Semiconductor

33810

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

CURRENT SENSE COMPARATOR (RSP, RSN) (CONTINUED)

MAXI Trip Threshold Accuracy

Steady State Condition

6.0 A across 0.02

Ω (RSP - RSN = 120 mV)

21 A across 0.04

Ω (RSP - RSN = 840 mV)

-7.5

–

7.5

%

MAXI Trip Point During Overlapping Dwell

-35

–

+35

%

Input Bias Current

RSP and RSN

-50

–

50

µA

Comparator Hysteresis Voltage

NOMI

MAXI

40

40

–

–

70

70

% of VT

Input Voltage Range (Maximum voltage between RSN and RSP)(12)

0.0

–

2.0

V

Ground Offset Voltage Range(12)

Maximum offset between RSN pin and IC Ground (Exposed Pad)

-0.3

–

0.3

V

GENERAL PURPOSE GATE DRIVER PARAMETERS (GD 0:3)

Gate Drive Sink and Source Current

1.0

2.0

5

mA

Gate Drive Output Voltage

4.8

0.0

7.0

0.2

9.0

0.5

V

V

Short to Battery Fault Detection Voltage Threshold

Programmable from 0.5 to 3.0 V in 0.5 V increments. (Table 14)

-35%

+35%

V

Open Fault Detection Voltage Threshold (referenced to IC ground tab)

2.0

2.5

3.0

V

Output OFF Open Load Detection Current

FBx = 18 V, Outputs Programmed OFF

50

75

120

μA

Output Clamp Voltage

48

53

58

V

DIGITAL INTERFACE

Input Logic High-voltage Thresholds

–

V

Input Logic Low-voltage Thresholds

GND - 0.3

–

V

Input Logic-voltage Hysteresis

100

–

400

mV

Input Logic Capacitance

–

–

20

pF

Sleep Mode Input Logic Current

-10

–

10

μA

Input Logic Pull-down Current

30

50

100

μA

Notes

12.

This parameter is guaranteed by design, however it is not production tested.

Table 3. Static Electrical Characteristics

Characteristics noted under conditions of 3.0 V

≤ VDD ≤ 5.5 V, 6.0 V ≤ VPWR ≤ 32 V, -40°C ≤ TC ≤ 125°C, and calibrated

timers, unless otherwise noted. Where typical values reflect the parameter’s approx. average value with VPWR = 13 V, TA =

25

°C.

Characteristic

Symbol

Min

Typ

Max

Unit