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CBR1-D080S Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CBR1-D080S Datasheet(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page CBR1-D020S SERIES SURFACE MOUNT 1 AMP SILICON BRIDGE RECTIFIER DESCRIPTION: The CENTRAL SEMICONDUCTOR CBR1-D020S series types are silicon full wave bridge rectifiers mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips. NOTE: Also available in Fast Recovery, please contact factory for details. MARKING: FULL PART NUMBER MAXIMUM RATINGS: CBR1- CBR1- CBR1- CBR1- CBR1- (TA=25°C unless otherwise noted) SYMBOL D020S D040S D060S D080S D100S UNITS Peak Repetitive Reverse Voltage VRRM 200 400 600 800 1000 V DC Blocking Voltage VR 200 400 600 800 1000 V RMS Reve VR(RMS) 140 280 420 560 700 V Average Forward Current (TA=50°C) IO 1.0 A Peak Forward Surge Current IFSM 50 A Rating for Fusing (t<8.35ms) I2t 10 A2s Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IR VR=Rated VRRM 10 µA IR VR=Rated VRRM, TA=125°C 0.5 mA VF IF=1.0A 1.1 V CJ VR=4.0V, f=1.0MHz 25 pF SMDIP CASE R3 (4-January 2010) www.centra lsemi.com |
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