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CY7C1041DV33-10VXI Datasheet(PDF) 7 Page - Cypress Semiconductor |
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CY7C1041DV33-10VXI Datasheet(HTML) 7 Page - Cypress Semiconductor |
7 / 17 page CY7C1041DV33 Document Number: 38-05473 Rev. *I Page 7 of 17 Data Retention Characteristics Over the Operating Range Parameter Description Conditions[16] Min Max Unit VDR VCC for data retention 2.0 – V ICCDR Data retention current VCC = VDR = 2.0 V, CE > VCC – 0.3 V, VIN > VCC – 0.3 V or VIN < 0.3 V Industrial – 10 mA Auto-A [17] – 10 mA Auto-E [17] – 15 mA tCDR[18] Chip deselect to data retention time 0 – ns tR[19] Operation recovery time tRC –ns Data Retention Waveform Switching Waveforms Figure 4. Read Cycle No. 1[20, 21] 3.0 V 3.0 V tCDR VDR > 2 V DATA RETENTION MODE tR CE VCC PREVIOUS DATA VALID DATA VALID tRC tAA tOHA ADDRESS DATA OUT Notes 16. No input may exceed VCC + 0.3 V. 17. Automotive product information is preliminary. 18. Tested initially and after any design or process changes that may affect these parameters. 19. Full device operation requires linear VCC ramp from VDR to VCC(min.) > 50 μs or stable at VCC(min.) > 50 μs. 20. Device is continuously selected. OE, CE, BHE, and BLE = VIL. 21. WE is HIGH for read cycle. [+] Feedback |
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