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APTCV60TLM24T3G Datasheet(PDF) 5 Page - Microsemi Corporation

Part # APTCV60TLM24T3G
Description  CoolMOS & Trench Field Stop IGBT
Download  13 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTCV60TLM24T3G Datasheet(HTML) 5 Page - Microsemi Corporation

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APTCV60TLM24T3G
www.microsemi.com
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CR7 & CR8 diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
100
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
500
µA
IF
DC Forward Current
Tc = 80°C
30
A
IF = 30A
2.6
3.1
IF = 60A
3.2
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
1.8
V
Tj = 25°C
300
trr
Reverse Recovery Time
Tj = 125°C
380
ns
Tj = 25°C
360
Qrr
Reverse Recovery Charge
IF = 30A
VR = 800V
di/dt =200A/µs
Tj = 125°C
1700
nC
Err
Reverse Recovery Energy
IF = 30A
VR = 800V
di/dt =1000A/µs
Tj = 125°C
1.6
mJ
RthJC
Junction to Case Thermal Resistance
1.2
°C/W
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
Characteristic
Min
Typ
Max
Unit
R25
Resistance @ 25°C
50
k
Ω
∆R25/R25
5
%
B25/85
T25 = 298.15 K
3952
K
∆B/B
TC=100°C
4
%
⎥
⎦
⎤
⎢
⎣
⎡
⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
−
=
T
T
B
R
R
T
1
1
exp
25
85
/
25
25
T: Thermistor temperature
RT: Thermistor value at T


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