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2N3634 Datasheet(PDF) 1 Page - Microsemi Corporation

Part # 2N3634
Description  RADIATION HARDENED
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N3634 Datasheet(HTML) 1 Page - Microsemi Corporation

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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/357
T4-LDS-0065 Rev. 2 (100377)
Page 1 of 5
DEVICES
LEVELS
2N3634
2N3635
2N3636
2N3637
JANSM – 3K Rads (Si)
2N3634L
2N3635L
2N3636L
2N3637L
JANSD – 10K Rads (Si)
2N3634UB
2N3635UB
2N3636UB
2N3637UB
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
2N3634*
2N3635*
2N3636*
2N3637*
Unit
Collector-Emitter Voltage
VCEO
140
175
Vdc
Collector-Base Voltage
VCBO
140
175
Vdc
Emitter-Base Voltage
VEBO
5.0
5.0
Vdc
Collector Current
IC
1.0
1.0
Adc
Total Power Dissipation
UB:
@ TA = +25°C
@ TC = +25°C
@ TC = +25°C
PT **
1.0
5.0
1.5
W
W
W
Operating & Storage Junction Temperature
Range
TJ, Tstg
-65 to +200
°C
* Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding
devices.
** Consult 19500/357 for De-Rating curves.
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc
2N3634, 2N3635
2N3636, 2N3637
V(BR)CEO
140
175
Vdc
Collector-Base Cutoff Current
VCB = 100Vdc
VCB = 140Vdc
VCB = 175Vdc
2N3634, 2N3635
2N3636, 2N3637
ICBO
100
10
10
ηAdc
μAdc
μAdc
Emitter-Base Cutoff Current
VEB = 3.0Vdc
VEB = 5.0Vdc
IEBO
50
10
ηAdc
μAdc
Collector-Emitter cutoff Current
VCE = 100Vdc
ICEO
10
μAdc
TO-5*
2N3634L, 2N3635L
2N3636L, 2N3637L
TO-39* (TO-205AD)
2N3634, 2N3635
2N3636, 2N3637
3 PIN
2N3634UB, 2N3635UB
2N3636UB, 2N3637UB


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