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2N3866 Datasheet(PDF) 1 Page - Microsemi Corporation |
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2N3866 Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 4 page TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com NPN SILICON HIGH-FREQUENCY TRANSISTOR Qualified per MIL-PRF-19500/398 T4-LDS-0175 Rev. 1 (101096) Page 1 of 4 DEVICES LEVELS 2N3866 2N3866UB JAN 2N3866A 2N3866AUB JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 30 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 305 Vdc Collector Current IC 400 mAdc Total Power Dissipation @ TA = +25°C 2N3866, A 2N3866UB / AUB PT 1.0 0.5 W Operating & Storage Junction Temperature Range Tj, Tstg -65 to +200 °C Thermal Resistance, Junction-to-Case RθJC 60.0 °C/W NOTE: 1. Derate linearly 5.71mW/°C (2N3866, 2N3866A) and 3.08mW/°C (2N3866UB / 2N3866AUB) above TA > +25°C 2. TA = room ambient as defined in the general requirements of MIL-PRF-19500 3. PT = 2.9W at TC = +25°C, derate at 16.6mW/°C above TC > +25°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 5.0mAdc V(BR)CEO 30 Vdc Collector-Base Breakdown Voltage IC = 100µAdc V(BR)CBO 60 Vdc Emitter-Base Breakdown Voltage IE = 100µAdc V(BR)EBO 3.5 Vdc Collector-Emitter Cutoff Current VCE = 28Vdc ICEO 20 μAdc Collector-Emitter Cutoff Current VCE = 55Vdc ICES1 100 μAdc TO-39 (TO-205AD) 2N3866, 2N3866A UB Package 2N3866UB, 2N3866AUB |
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