VT3045C datasheet(2/5 Pages) VISHAY

Part #	VT3045C

Description	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

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Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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For technical questions within your region, please contact one of the following:

Document Number: 89350

2

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Revision: 30-Nov-10

VT3045C, VIT3045C

Vishay General Semiconductor

New Product

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

≤ 40 ms

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 2 - Forward Power Loss Characteristics Per Diode

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Instantaneous forward voltage per diode

IF = 5.0 A

TA = 25 °C

VF (1)

0.42

-

V

IF = 7.5 A

0.44

-

IF = 15 A

0.49

0.57

IF = 5.0 A

TA = 125 °C

0.30

-

IF = 7.5 A

0.33

-

IF = 15 A

0.39

0.48

Reverse current per diode

VR = 45 V

TA = 25 °C

IR (2)

-

2000

μA

TA = 125 °C

17

50

mA

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VT3045C

VIT3045C

UNIT

Typical thermal resistance

per diode

RθJC

1.6

°C/W

per device

0.85

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

TO-220AB

VT3045C-M3/4W

1.89

4W

50/tube

Tube

TO-262AA

VIT3045C-M3/4W

1.46

4W

50/tube

Tube

Case Temperature (°C)

35

30

25

20

5

0

100

110

120

130

140

150

15

10

0

1

6

7

8

9

02

6

10

16

18

Average Forward Current (A)

D = 0.1

D = 0.2

D = 0.3

D = 0.5

D = 0.8

D = 1.0

12

D = t

p/T

t

p

T

3

4

5

2

14

4

8

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