IPP60R250CP datasheet(2/10 Pages) INFINEON

Part #	IPP60R250CP

Description	CoolMOSTM Power Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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2 / 10 page

IPP60R250CP

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous diode forward current

I S

A

Diode pulse current

2)

I S,pulse

40

Reverse diode dv /dt

4)

dv /dt

15

V/ns

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance, junction - case

R thJC

-

1.2

K/W

R thJA

leaded

-

62

Soldering temperature,

wavesoldering only allowed at leads

T sold

1.6 mm (0.063 in.)

from case for 10 s

-

260

°C

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=250 µA

600

-

V

Gate threshold voltage

V GS(th)

V DS=V GS, I D=0,44 mA

2.5

3

3.5

Zero gate voltage drain current

I DSS

V DS=600 V, V GS=0 V,

T j=25 °C

--

1

µA

V DS=600 V, V GS=0 V,

T j=150 °C

-10-

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

100

nA

Drain-source on-state resistance

R DS(on)

V GS=10 V, I D=7.8 A,

T j=25 °C

-

0.22

0.25

Ω

V GS=10 V, I D=7.8 A,

T j=150 °C

-

0.59

-

Gate resistance

R G

f =1 MHz, open drain

-

1.3

-

Ω

Value

T C=25 °C

7.8

Values

Thermal resistance, junction -

ambient

Rev. 2.0

page 2

2008-07-11

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