CMPT3906G datasheet(1/2 Pages) CENTRAL

Part #	CMPT3906G

Description	SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS

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Manufacturer	CENTRAL [Central Semiconductor Corp]

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CMPT3904 CMPT3904G*

NPN

CMPT3906 CMPT3906G*

PNP

SURFACE MOUNT

COMPLEMENTARY

SILICON TRANSISTORS

DESCRIPTION:

These CENTRAL SEMICONDUCTOR devices are

complementary silicon transistors manufactured by the

epitaxial planar process, epoxy molded in a surface

mount package, designed for small signal general

purpose amplifier and switching applications.

MARKING CODES: CMPT3904:

C1A

CMPT3906:

C2A

CMPT3904G*: CG1

CMPT3906G*: CG2

CMPT3904

CMPT3906

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

CMPT3904G* CMPT3906G*

UNITS

Collector-Base Voltage

VCBO

60

40

V

Collector-Emitter Voltage

VCEO

40

V

Emitter-Base Voltage

VEBO

6.0

5.0

V

Continuous Collector Current

IC

200

mA

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

CMPT3904

CMPT3906

ELECTRICAL CHARACTERISTICS: (TA=25°C)

CMPT3904G*

CMPT3906G*

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

ICEV

VCE=30V, VEB=3.0V

-

50

-

50

nA

IBL

VCE=30V, VEB=3.0V

-

50

-

50

nA

BVCBO

IC=10μA

60

-

40

-

V

BVCEO

IC=1.0mA

40

-

40

-

V

BVEBO

IE=10μA

6.0

-

5.0

-

V

VCE(SAT)

IC=10mA, IB=1.0mA

-

0.20

-

0.25

V

VCE(SAT)

IC=50mA, IB=5.0mA

-

0.30

-

0.40

V

VBE(SAT)

IC=10mA, IB=1.0mA

0.65

0.85

0.65

0.85

V

VBE(SAT)

IC=50mA, IB=5.0mA

-

0.95

-

0.95

V

hFE

VCE=1.0V, IC=0.1mA

40

-

60

-

hFE

VCE=1.0V, IC=1.0mA

70

-

80

-

hFE

VCE=1.0V, IC=10mA

100

300

100

300

hFE

VCE=1.0V, IC=50mA

60

-

60

-

hFE

VCE=1.0V, IC=100mA

30

-

30

-

* Device is Halogen Free by design

SOT-23 CASE

R7 (1-February 2010)

www.centr a lsemi.com

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