CMXDM7002A

SURFACE MOUNT

DUAL N-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFETS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMXDM7002A

is special dual version of the 2N7002 Enhancement-

mode N-Channel Field Effect Transistor, manufactured

by the N-Channel DMOS Process, and designed for

high speed pulsed amplifier and driver applications.

This special Dual Transistor device offers low rDS(ON)

and low VDS(ON).

MARKING CODE: X02A

SOT-26 CASE

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Drain-Source Voltage

VDS

60

V

Drain-Gate Voltage

VDG

60

V

Gate-Source Voltage

VGS

40

V

Continuous Drain Current

ID

280

mA

Continuous Source Current (Body Diode)

IS

280

mA

Maximum Pulsed Drain Current

IDM

1.5

A

Maximum Pulsed Source Current

ISM

1.5

A

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

IGSSF, IGSSR VGS=20V, VDS=0

100

nA

IDSS

VDS=60V, VGS=0

1.0

μA

IDSS

VDS=60V, VGS=0, TJ=125°C

500

μA

ID(ON)

VGS=10V, VDS=10V

500

mA

BVDSS

VGS=0, ID=10μA

60

V

VGS(th)

VDS=VGS, ID=250μA

1.0

2.5

V

VDS(ON)

VGS=10V, ID=500mA

1.0

V

VDS(ON)

VGS=5.0V, ID=50mA

0.15

V

VSD

VGS=0, IS=400mA

1.2

V

rDS(ON)

VGS=10V, ID=500mA

2.0

Ω

rDS(ON)

VGS=10V, ID=500mA, TJ=125°C

3.5

Ω

rDS(ON)

VGS=5.0V, ID=50mA

3.0

Ω

rDS(ON)

VGS=5.0V, ID=50mA, TJ=125°C

5.0

Ω

gFS

VDS=10V, ID=200mA

80

mS

Crss

VDS=25V, VGS=0, f=1.0MHz

5.0

pF

Ciss

VDS=25V, VGS=0, f=1.0MHz

50

pF

Coss

VDS=25V, VGS=0, f=1.0MHz

25

pF

ton, toff

VDD=30V, VGS=10V, ID=200mA,

RG=25Ω, RL=150Ω

20

ns

R2 (12-February 2010)

www.centra lsemi.com