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CMXDM7002A Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CMXDM7002A Datasheet(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page CMXDM7002A SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXDM7002A is special dual version of the 2N7002 Enhancement- mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, and designed for high speed pulsed amplifier and driver applications. This special Dual Transistor device offers low rDS(ON) and low VDS(ON). MARKING CODE: X02A SOT-26 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Drain-Source Voltage VDS 60 V Drain-Gate Voltage VDG 60 V Gate-Source Voltage VGS 40 V Continuous Drain Current ID 280 mA Continuous Source Current (Body Diode) IS 280 mA Maximum Pulsed Drain Current IDM 1.5 A Maximum Pulsed Source Current ISM 1.5 A Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS IGSSF, IGSSR VGS=20V, VDS=0 100 nA IDSS VDS=60V, VGS=0 1.0 μA IDSS VDS=60V, VGS=0, TJ=125°C 500 μA ID(ON) VGS=10V, VDS=10V 500 mA BVDSS VGS=0, ID=10μA 60 V VGS(th) VDS=VGS, ID=250μA 1.0 2.5 V VDS(ON) VGS=10V, ID=500mA 1.0 V VDS(ON) VGS=5.0V, ID=50mA 0.15 V VSD VGS=0, IS=400mA 1.2 V rDS(ON) VGS=10V, ID=500mA 2.0 Ω rDS(ON) VGS=10V, ID=500mA, TJ=125°C 3.5 Ω rDS(ON) VGS=5.0V, ID=50mA 3.0 Ω rDS(ON) VGS=5.0V, ID=50mA, TJ=125°C 5.0 Ω gFS VDS=10V, ID=200mA 80 mS Crss VDS=25V, VGS=0, f=1.0MHz 5.0 pF Ciss VDS=25V, VGS=0, f=1.0MHz 50 pF Coss VDS=25V, VGS=0, f=1.0MHz 25 pF ton, toff VDD=30V, VGS=10V, ID=200mA, RG=25Ω, RL=150Ω 20 ns R2 (12-February 2010) www.centra lsemi.com |
Similar Part No. - CMXDM7002A_10 |
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Similar Description - CMXDM7002A_10 |
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