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CPD80V Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CPD80V Datasheet(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page GEOMETRY PROCESS DETAILS PRINCIPAL DEVICE TYPES CMPD2003 CMPD2004 CMPD2005 1N3070 CMDD2004 CMSD2004 CMOD2004 CMXD2004 CMLD2004 GROSS DIE PER 5 INCH WAFER 64,704 PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å BACKSIDE CATHODE www.centr a lsemi.com R3 (22-March 2010) |
Similar Part No. - CPD80V_10 |
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Similar Description - CPD80V_10 |
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