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CY62168DV30 Datasheet(PDF) 9 Page - Cypress Semiconductor |
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CY62168DV30 Datasheet(HTML) 9 Page - Cypress Semiconductor |
9 / 13 page CY62168DV30 MoBL® Document Number : 38-05329 Rev. *I Page 9 of 13 Notes 23. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates the write. 24. Data I/O is high impedance if OE = VIH 25. If CE1 goes HIGH or CE2 goes LOW simultaneously with WE HIGH, the output remains in high-impedance state. 26. During this period, the I/Os are in output state and input signals should not be applied Figure 4. Write Cycle No. 2 (CE1 or CE2 Controlled)[23, 24, 25] Figure 5. Write Cycle No. 3 (WE Controlled, OE LOW)[26] Switching Waveforms (continued) tWC tAW tSA tPWE tHA tSCE VALID DATA tHD tSD CE1 ADDRESS CE2 WE DATA I/O OE VALID DATA tHD tSD tLZWE tPWE tSA tHA tAW tSCE tWC tHZWE See Note 26 ADDRESS CE2 WE DATA I/O CE1 [+] Feedback |
Similar Part No. - CY62168DV30_10 |
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Similar Description - CY62168DV30_10 |
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