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CY62168DV30 Datasheet(PDF) 9 Page - Cypress Semiconductor

Part # CY62168DV30
Description  16-Mbit (2M x 8) MoBL짰 Static RAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY62168DV30 Datasheet(HTML) 9 Page - Cypress Semiconductor

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CY62168DV30 MoBL®
Document Number : 38-05329 Rev. *I
Page 9 of 13
Notes
23. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a write and any of these signals
can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates the write.
24. Data I/O is high impedance if OE = VIH
25. If CE1 goes HIGH or CE2 goes LOW simultaneously with WE HIGH, the output remains in high-impedance state.
26. During this period, the I/Os are in output state and input signals should not be applied
Figure 4. Write Cycle No. 2 (CE1 or CE2 Controlled)[23, 24, 25]
Figure 5. Write Cycle No. 3 (WE Controlled, OE LOW)[26]
Switching Waveforms (continued)
tWC
tAW
tSA
tPWE
tHA
tSCE
VALID DATA
tHD
tSD
CE1
ADDRESS
CE2
WE
DATA I/O
OE
VALID DATA
tHD
tSD
tLZWE
tPWE
tSA
tHA
tAW
tSCE
tWC
tHZWE
See Note 26
ADDRESS
CE2
WE
DATA I/O
CE1
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