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CY62168DV30LL-55BVI Datasheet(PDF) 8 Page - Cypress Semiconductor

Part # CY62168DV30LL-55BVI
Description  16-Mbit (2M x 8) MoBL짰 Static RAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY62168DV30LL-55BVI Datasheet(HTML) 8 Page - Cypress Semiconductor

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CY62168DV30 MoBL®
Document Number : 38-05329 Rev. *I
Page 8 of 13
Switching Waveforms
Figure 1. Read Cycle No. 1 (Address Transition Controlled)[16, 17]
Figure 2. Read Cycle No. 2 (OE Controlled)[17, 18]
Figure 3. Write Cycle No. 1 (WE Controlled)[19, 20, 21]
Notes
16. Device is continuously selected. OE, CE1 = VIL, CE2 = VIH.
17. WE is HIGH for read cycle.
18. Address valid prior to or coincident with CE1 transition LOW and CE2 transition HIGH.
19. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a write and any of these
signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates the write.
20. Data I/O is high impedance if OE = VIH.
21. If CE1 goes HIGH or CE2 goes LOW simultaneously with WE HIGH, the output remains in high-impedance state.
22. During this period, the I/Os are in output state and input signals should not be applied.
PREVIOUS DATA VALID
DATA VALID
tRC
tAA
tOHA
ADDRESS
DATA OUT
50%
50%
DATA VALID
tRC
tACE
tDOE
tLZOE
tLZCE
tPU
HIGH IMPEDANCE
tHZOE
tHZCE
tPD
HIGH
ICC
ISB
IMPEDANCE
OE
CE1
ADDRESS
DATA OUT
SUPPLY
CURRENT
VCC
CE2
tHD
tSD
tPWE
tSA
tHA
tAW
tSCE
t
VALID DATA
See Note 22
tWC
HZOE
CE1
ADDRESS
CE2
WE
DATA I/O
OE
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