CQD-4M

CQD-4N

SURFACE MOUNT

4 AMP SILICON TRIAC

600 THRU 800 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CQD-4M series

type is an Epoxy Molded Silicon Triac designed for full

wave AC control applications featuring gate triggering

in all four (4) quadrants.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TC=25°C unless otherwise noted)

SYMBOL

CQD-4M

CQD-4N

UNITS

Peak Repetitive Off-State Voltage

VDRM

600

800

V

RMS On-State Current (TC=80°C)

IT(RMS)

4.0

A

Peak One Cycle Surge, t=10ms

ITSM

40

A

2.4

Peak Gate Power, tp=10μs

PGM

3.0

W

Average Gate Power Dissipation

PG(AV)

0.2

W

Peak Gate Current, tp=10μs

IGM

1.2

A

Operating Junction Temperature

TJ

-40 to +125

°C

Storage Temperature

Tstg

-40 to +150

°C

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IDRM

Rated VDRM, RGK=1KΩ

10

μA

IDRM

Rated VDRM, RGK=1KΩ, TC=125°C

200

μA

IGT

VD=12V, QUAD I, II, III

2.5

5.0

mA

IGT

VD=12V, QUAD IV

5.4

9.0

mA

IH

RGK=1KΩ

1.6

5.0

mA

VGT

VD=12V, QUAD I, II, III, IV

0.95

1.75

V

VTM

ITM=6.0A, tp=380μs

1.25

1.75

V

dv/dt

11

V/μs

DPAK THYRISTOR CASE

R1 (12-February 2010)

www.centra lsemi.com